| PART |
Description |
Maker |
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| PC865 PC865-SERIES |
High Sensitivity/ Low Collector Dark Voltage Type Photocoupler Current/ High Collector-emitter
High Sensitivity, Low Collector Dark Voltage Type Photocoupler Current, High Collector-emitter
High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| BCV62 |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| SMBTA06 SMBTA0607 |
NPN Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
